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Thickness Dependence of Dielectric, Leakage, and Ferroelectric Properties of Bi 6 Fe 2 Ti 3 O 18 Thin Films Derived by Chemical Solution Deposition
Author(s) -
Song Dongpo,
Tang Xianwu,
Yuan Bin,
Zuo Xuzhong,
Yang Jie,
Chen Li,
Song Wenhai,
Zhu Xuebin,
Sun Yuping
Publication year - 2014
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13200
Subject(s) - aurivillius , materials science , thin film , ferroelectricity , dielectric , microstructure , polarization (electrochemistry) , leakage (economics) , dielectric loss , analytical chemistry (journal) , mineralogy , composite material , nanotechnology , optoelectronics , chemistry , macroeconomics , chromatography , economics
We prepared Bi 6 Fe 2 Ti 3 O 18 thin films on Pt/Ti/SiO 2 /Si substrates with thickness ranging from ∼300 to ∼900 nm by using a chemical solution deposition route and investigated the thickness effects on the microstructure, dielectric, leakage, and ferroelectric properties of Bi 6 Fe 2 Ti 3 O 18 thin films. Increasing thickness improves the surface morphology, dielectric, and leakage properties of Bi 6 Fe 2 Ti 3 O 18 thin films and a well‐defined ferroelectric hysteresis loops can form for the thin films with the thickness above 400 nm. Moreover, the thickness dependence of saturation polarization is insignificant, whereas the remnant polarization decreases slightly with increasing thickness and it possesses a maximal value of ∼20 μC/cm 2 for the 500 nm‐thick thin films. The mechanisms of the thickness dependence of microstructure, dielectric, and ferroelectric properties are discussed in detail. The results will provide a guidance to optimize the ferroelectric properties in Bi 6 Fe 2 Ti 3 O 18 thin films by chemical solution deposition, which is important to further explore single‐phase multiferroics in the n = 5 Aurivillius thin films.