Premium
Growth of AlN Crystals on SiC Substrates by Thermal Nitridation of Al 2 O 3
Author(s) -
You Yu,
Ohtsuka Makoto,
Miyake Hideto,
Fukuyama Hiroyuki
Publication year - 2014
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13183
Subject(s) - materials science , substrate (aquarium) , graphite , layer (electronics) , epitaxy , crystallography , chemical engineering , nanotechnology , composite material , chemistry , oceanography , geology , engineering
The growth of AlN crystals on c ‐plane 6 H – SiC substrates by thermal nitridation of Al 2 O 3 pellets in the presence of graphite and ZrO 2 was demonstrated. Addition of graphite and ZrO 2 effectively accelerated the evaporation of Al 2 O 3 , yielding c ‐axis oriented AlN films on SiC substrates. The SiC substrate was severely deteriorated at 2173 K, which produced a porous interface between the AlN film and substrate, resulting in low‐quality AlN crystals. The deterioration of SiC was successfully suppressed by introducing a pre‐deposited homo‐buffer layer, allowing two‐dimensional‐like growth of AlN . The buffer layer promoted the formation of a high‐quality AlN film. At 2173 K, the full‐width at half maximum of the X ‐ray rocking curves of the (0002) and (10–10) planes of the AlN film was 360 and 425 arcsec, respectively.