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Effect of Ferroelectric Polarization on Ionic Transport and Resistance Degradation in BaTiO 3 by Phase‐Field Approach
Author(s) -
Cao Ye,
Shen Jie,
Randall Clive,
Chen LongQing
Publication year - 2014
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13162
Subject(s) - ferroelectricity , polarization (electrochemistry) , materials science , ferroelectric capacitor , capacitor , condensed matter physics , phase boundary , ionic bonding , phase (matter) , voltage , dielectric , optoelectronics , chemistry , physics , ion , organic chemistry , quantum mechanics
We proposed a model to study the resistance degradation behavior of ferroelectric oxides in the presence of ferroelectric spontaneous polarization by combining the phase‐field model of ferroelectric domains and nonlinear diffusion equations for ionic/electronic transport. We took into account the nonperiodic boundary conditions for solving the electrochemical transport equations and Ginzburg–Landau equations using the Chebyshev collocation algorithm. We considered a single domain structure relative to a thin film BaTiO 3 single crystal orientated to the normal of the electrode plates (Ni) in a single parallel plate capacitor configuration. The capacitor was subjected to a dc bias of 0.5 V either along the polarization direction or opposite to the polarization direction at 25°C. It is shown that the polarization bound charges at the metal/ferroelectric interface play an important role in charge carrier transport and leakage current evolution in BaTiO 3 capacitor.