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Sol–Gel‐Derived High‐Performance Stacked Transparent Conductive Oxide Thin Films
Author(s) -
Sugahara Tohru,
Hirose Yukiko,
Cong Shuren,
Koga Hirotaka,
Jiu Jinting,
Nogi Masaya,
Nagao Shijo,
Suganuma Katsuaki
Publication year - 2014
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13116
Subject(s) - materials science , thin film , transparent conducting film , transmittance , indium tin oxide , surface roughness , tin oxide , layer (electronics) , surface finish , oxide , sol gel , optoelectronics , electrical conductor , conductivity , electrical resistivity and conductivity , doping , composite material , nanotechnology , metallurgy , chemistry , engineering , electrical engineering
Single‐ and multi‐layer transparent conductive oxide ( TCO ) thin films exhibiting high performance, good packing density and low surface/interface roughness are deposited on silica glass substrates by the sol–gel method. The crystal and microstructural properties of the TCO thin films are evaluated as an alternate to films prepared by ultra‐high vacuum deposition. Tin‐doped indium oxide ( ITO ) thin films produced using a two‐step drying process showed low surface roughness because of dense packing structure not only horizontal but also vertical directions. As a result, electrical conductivity, carrier concentration, carrier mobility, and optical transmittance of 2.3 × 10 3 S/cm, 8 × 10 20 cm −3 , 18 cm 2 /Vs, and over 98% at 500 nm, respectively, were achieved. A multilayer ZnO/ ITO stacked structure was also fabricated using the sol–gel process. Our findings suggest that solution‐based methods show promise as an alternative to existing ultra‐high vacuum methods to fabricate TCO thin films.