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Electrical Properties of a 0.95( Na 0.5 K 0.5 ) NbO 3 –0.05 CaTiO 3 Thin Film Grown on a Pt / Ti / SiO 2 / Si Substrate
Author(s) -
Lee YounSeon,
Seo InTae,
Kim BoYun,
Nahm Sahn,
Kang ChongYun,
Jeong YoungHun,
Paik JongHoo
Publication year - 2014
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13050
Subject(s) - materials science , analytical chemistry (journal) , amorphous solid , natural bond orbital , annealing (glass) , dielectric , phase (matter) , mineralogy , crystallography , chemistry , composite material , optoelectronics , organic chemistry , chromatography , density functional theory , computational chemistry
An amorphous phase was formed in a 0.95( Na 0.5 K 0.5 ) NbO 3 –0.05 CaTiO 3 (NKN‐CT) film grown at 300°C, and a low‐temperature transient Ca 2 Nb 2 O 7 phase was formed in the film grown at 500°C. In films grown at high temperatures (≥600°C), secondary phases such as K 5.75 Nb 10.85 O 30 and K 4 Ti 10 Nb 2 O 27 were developed without the formation of a NKN‐CT phase, probably because of Na 2 O evaporation. The same secondary phases were formed in the film grown at 300°C and subsequently annealed at 850°C under an air atmosphere. However, a homogeneous NKN‐CT phase was formed in films grown at 300°C and subsequently annealed at 830°C–880°C under the K 2 O and Na 2 O atmospheres. Moreover, the film annealed at 830°C in particular exhibited good electric and piezoelectric properties, including a high dielectric constant of 747 with a low dissipation factor of 0.93% at 100 kHz, low leakage current density of 2.0 × 10 −7 A/cm 2 at 0.1 MV/cm, and high P r and d 33 values of 15.4 μC/cm 2 and 124 pm/V at 100 kV/cm, respectively.