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A Cu–Pd–V System Filler Alloy for Silicon Nitride Ceramic Joining and the Interfacial Reactions
Author(s) -
Xiong HuaPing,
Chen Bo,
Pan Yu,
Zhao HaiSheng,
Mao Wei,
Cheng YaoYong
Publication year - 2014
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13005
Subject(s) - brazing , materials science , sessile drop technique , alloy , silicon nitride , ceramic , wetting , composite material , contact angle , drop (telecommunication) , melting point , layer (electronics) , metallurgy , telecommunications , computer science
A Cu–Pd–V brazing alloy with the composition of Cu–(38.0~42.0)Pd–(7.0~10.0)V (in wt.%) was designed as a filler for joining Si 3 N 4 . Its wettability on Si 3 N 4 ceramic was measured with the sessile drop method. It was shown that the Cu–Pd–V alloy gave a contact angle of 71° at 1473 K. The filler alloy was fabricated into foils with a thickness of 0.15 mm. The Si 3 N 4 –Si 3 N 4 joints brazed at 1443 K for 10 min exhibit average three‐point bend strength of 263 MP a at room temperature, and the joint strengths at 973 K and 1073 K are 277 MP a and 218 MP a, respectively. The analysis results of SEM , XRD , and TEM for the brazed joint indicate the presence of V 2 N at the surface of the Si 3 N 4 . The increase of the thickness of V 2 N reaction layer obeyed parabolic law, and the parabolic rate constant (k) can be described as k = 2.8739 × 10 −9 exp(−162989.4/ RT ) m 2 /s. Pd 2 Si and Cu 3 Pd compounds as well as (Cu, Pd) solid solution were detected in the central part of the joints. The presence of (Cu, Pd) phases and especially refractory Pd 2 Si compounds within the joints should contribute to the stable high‐temperature property. The interfacial reaction mechanisms were discussed.