Growth of Highly (100)‐Oriented   SrTiO   3  Thin Films on Si(111) Substrates Without Buffer Layer | Zendy

Panomsuwan Gasidit | Zendy; Takai Osamu | Zendy; Saito Nagahiro | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Growth of Highly (100)‐Oriented SrTiO 3 Thin Films on Si(111) Substrates Without Buffer Layer

Author(s) -

Panomsuwan Gasidit,

Takai Osamu,

Saito Nagahiro

Publication year - 2014

Publication title -

journal of the american ceramic society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.9

H-Index - 196

eISSN - 1551-2916

pISSN - 0002-7820

DOI - 10.1111/jace.12912

Subject(s) - materials science , buffer (optical fiber) , sputtering , electron cyclotron resonance , thin film , layer (electronics) , texture (cosmology) , analytical chemistry (journal) , optoelectronics , composite material , nanotechnology , ion , chemistry , electrical engineering , engineering , image (mathematics) , organic chemistry , chromatography , artificial intelligence , computer science

The SrTiO 3 ( STO ) thin films were directly grown on Si (111) substrates without buffer layer by an electron‐cyclotron‐resonance ion beam sputter deposition. The growth temperature was varied from 700°C to 850°C, while other parameters were kept unchanged. X‐ray structural analysis demonstrates that the growth temperature has a strong influence in tuning degree of (100) orientation. The STO film grown at 800°C is found to be the highest degree of (100) orientation (98%) and a strong (100) fiber texture. For the surface morphology, the development of plate‐shaped grains reveals a good correlation with the change in the degree of (100) orientation. Moreover, the leakage current–voltage characteristics of the Au / STO / Si (111) metal‐insulator‐semiconductor capacitors are investigated and discussed in considerable detail.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research