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In‐Situ Raman Spectroscopy Study of Photoinduced Structural Changes in Ge‐ rich Chalcogenide Films
Author(s) -
Zhang Ran,
Ren Jing,
Jain Himanshu,
Liu Yinyao,
Xing Zhongwen,
Chen Guorong
Publication year - 2014
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.12879
Subject(s) - raman spectroscopy , chalcogenide , in situ , photobleaching , materials science , spectroscopy , photosensitivity , amorphous solid , irradiation , crystallography , analytical chemistry (journal) , chemistry , optics , optoelectronics , fluorescence , physics , organic chemistry , chromatography , quantum mechanics , nuclear physics
Very few studies have been directed at the compositional dependence of the intrinsic photostability of the Ge x Se 1− x binary ChG films especially for the Ge‐rich films with the mean coordination number ( MCN ) larger than 2.67. Here, by measuring the in‐situ transmission changes, it shows that the photosensitivity (e.g., photobleaching, PB ) of the Ge‐rich films (as compared to the GeSe 2 film) is attenuated, in fact almost completely eliminated in the film with the largest MCN . A straightforward technique, in‐situ Raman spectroscopy, is used to record the time‐resolved intrinsic structural changes during the irradiation of the films. The result indicates a transition from PB towards photostability occurs at the critical composition of GeSe 2 corresponding to the structural phase transition. The stressed rigid structures of the Ge‐rich films inhibit any significant photo‐structural changes.