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Effect of Cobalt Doping on the Structural, Microstructure and Microwave Dielectric Properties of MgTiO3 Ceramics Prepared by Semi Alkoxide Precursor Method
Author(s) -
Santhosh Kumar Thatikonda,
Gogoi Pallabi,
Perumal Alagarsamy,
Sharma Pramod,
Pamu Dobbidi
Publication year - 2014
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.12851
Subject(s) - materials science , microstructure , ionic radius , relative density , dielectric , ceramic , analytical chemistry (journal) , sintering , grain size , mineralogy , relative permittivity , microwave , mechanosynthesis , lattice constant , grain growth , crystal structure , permittivity , composite material , crystallography , diffraction , ball mill , ion , chemistry , optics , chromatography , physics , optoelectronics , quantum mechanics , organic chemistry
We report a systematic investigation on crystal structure, microstructure, and microwave dielectric properties of ( Mg 1− x C o x ) TiO 3 ( x = 0–0.07) ceramics prepared by semialkoxide precursor method. All the as‐made samples exhibit an ilmenite structure with an incredible reduction in sintering temperature from 1350°C to 1200°C. Lattice parameter increases with increasing Co content due to the larger ionic radius of Co 2+ as compared to Mg 2+ . The relative density, dielectric constant, and Q × f 0 values increase with increasing Co up to 0.05 and decreases for x > 0.05. This is attributed to local lattice distortion, maximum relative density, and uniform grain growth. Q × f 0 values were enhanced from 126 THz for x = 0 to a maximum value 170 THz for x = 0.05. A best combination of microwave dielectric properties (ε r ~ 17.03, Q × f 0 ~ 170 THz @ 9.4 GHz and τ f of −40 ppm/°C) was obtained for ( Mg 0.95 Co 0.05 ) TiO 3 ceramic sintered at 1200°C for 3 h. The observed results reveal ( Mg 0.95 Co 0.05 ) TiO 3 ceramic as one of the promising dielectric materials for low‐loss and millimeter‐microwave applications.