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Carbon Interlayer Between CVD SiC and SiO 2 in High‐Temperature Passive Oxidation
Author(s) -
Katsui Hirokazu,
Oguma Miyuki,
Goto Takashi
Publication year - 2014
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.12833
Subject(s) - raman spectroscopy , atmospheric temperature range , chemical vapor deposition , silicon carbide , carbon fibers , materials science , silicon , thermogravimetry , analytical chemistry (journal) , diffusion , layer (electronics) , transmission electron microscopy , thermal oxidation , carbide , chemical engineering , chemistry , inorganic chemistry , nanotechnology , composite material , metallurgy , physics , engineering , chromatography , meteorology , composite number , optics , thermodynamics
The oxidation behavior of high‐purity silicon carbide (SiC) prepared by chemical vapor deposition was investigated by thermogravimetry, transmission electron microscopy, and Raman spectroscopy in the temperature range 1534–1902 K in pure O 2 . The carbon layer formed at the SiC/SiO 2 interface upon oxidation above 1784 K. Raman peaks corresponding to D ‐ and G ‐bands could be identified from the carbon layer. Bubbles were observed in the SiO 2 scale after the oxidation at 1873 K. This could be attributed to the accumulation of CO gas at the SiC/SiO 2 interface, resulting in the formation of the carbon layer and bubbles. These suggest that the oxidation rate of SiC is limited by the outward diffusion of CO in the SiO 2 scale in this temperature range.