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Improved Crystal Quality of Transparent Conductive Ga ‐doped ZnO Films by Magnesium Doping Through Radio‐Frequency Magnetron Sputtering Preparation
Author(s) -
Liu WeiSheng,
Chen WeiKu,
Wu ShenYu,
Hsueh KuangPo
Publication year - 2014
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.12630
Subject(s) - materials science , thin film , x ray photoelectron spectroscopy , crystallinity , doping , photoluminescence , analytical chemistry (journal) , sputter deposition , electrical resistivity and conductivity , sputtering , grain size , optoelectronics , metallurgy , nanotechnology , nuclear magnetic resonance , composite material , chemistry , engineering , chromatography , physics , electrical engineering
This study investigates the enhanced structural, and optoelectronic properties of transparent conductive Ga ‐doped Mg x Zn 1 − x O ( GMZO ) thin films with a varied magnesium ( Mg ) composition of 2% and 8%, respectively. The X‐ray diffraction ( XRD ) measurements revealed that GMZO with an 8% Mg composition shows a stronger (002) diffraction intensity and narrower linewidth than that with a 2% Mg composition. Improved crystallinity and enlarged grain size in the postgrowth thermal annealed GMZO thin films were also observed in XRD and morphological measurements by atomic force microscopy. Photoluminescence measurements were conducted to investigate the improved GMZO thin‐film quality, and the oxygen vacancy signal was found to decrease with increased Mg content, consistent with X‐ray photoelectron spectroscopy measurements. This study also shows high optical transmittance over 98%, and a low resistivity of 5.7 × 10 −4 Ω·cm in Ga ‐doped Mg x Zn 1 − x O ( x = 0.02) thin film, which indicates the highly promising candidate for use in optoelectronic devices.