Sol–Gel‐Derived Amorphous‐ MgNb 2 O 6 Thin Films for Transparent Microelectronics

In this work, transparent amorphous‐ MgNb 2 O 6 thin films were fabricated on ITO /glass substrates using the sol–gel method. The change in the chemical states, as well as the optical and dielectric properties of MgNb 2 O 6 films at various annealing temperatures is investigated. In this study, MgNb 2 O 6 films exhibited the amorphous phase when the annealing temperature was below 600°C. From X ‐ray photoelectron spectroscopy, the major parts of the films' chemical states can be indexed as Mg 2+ , Nb 5+ , Nb 4+ , and O 2− . Furthermore, the Nb 4+ element can be reduced at higher annealing temperatures. The average transmission percentage in the visible range (λ = 400–800 nm) is over 80% for all MgNb 2 O 6 / ITO /glass samples, whereas the optical band gap ( E g ) for all samples is estimated at ~4 eV. In addition, the dielectric constant was calculated to be higher than 20 under a 1 MHz AC electric field, with a leakage current density below 2 × 10 −7  A/cm 2 at 1 V. In this study, the fabrication procedure and experiment results of MgNb 2 O 6 films are introduced for transparent microelectronics.