Ultra‐Broad Temperature Stability Obtained with Ce ‐Doped BaTiO 3 ‐Based Ceramics

Ce ‐doped BaTiO 3 ‐based ceramics were prepared and studied to satisfy ultra‐broad temperature stability (from −55°C to 300°C, capacitance variation rate based on C 20°C is within ±15%). The sample with 0.6 mol% CeO 2 succeeds to achieve this performance with a remarkably high ceiling temperature of 300°C. Meanwhile, the sample has good dielectric and electrical properties at room temperature (ε r  = 1667, tanδ = 1.478%, ρ V  = 5.9 × 10 12  Ω·cm). Ce ion can substitute for Ti ion as Ce 4+ or Ba ion as Ce 3+ . The substitution decreases the spontaneous polarization of BaTiO 3 , and then weakens the ferroelectricity of BaTiO 3 . As a result, the temperature stability of samples is improved obviously. Besides, CeO 2 addition promotes the formation of exaggerated grains, which are consisting of Ba 6 Ti 17 O 40 .