z-logo
Premium
Temperature Stable Dielectric Behavior of Sol–Gel Derived Compositionally Graded SrTiO 3 / Na 0.5 Bi 0.5 TiO 3 / SrTiO 3 Thin Films
Author(s) -
Šetinc Tina,
Spreitzer Matjaž,
Kunej Špela,
Kovač Janez,
Suvorov Danilo
Publication year - 2013
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.12519
Subject(s) - materials science , dielectric , permittivity , annealing (glass) , crystallite , ferroelectricity , temperature coefficient , dielectric loss , thermal stability , thin film , analytical chemistry (journal) , composite material , chemical engineering , optoelectronics , nanotechnology , chemistry , chromatography , engineering , metallurgy
Polycrystalline sol–gel‐derived SrTiO 3 / Na 0.5 Bi 0.5 TiO 3 / SrTiO 3 ( ST / NBT / ST ) thin films were designed to achieve the electrical isolation of the NBT , and to mediate the temperature dependency of the dielectric properties. Proper thermal annealing of particulate phase enabled us to achieve compositionally graded elemental profiles between individual ST and NBT layers. The dielectric and ferroelectric properties were investigated with respect to the electrical behavior of the monophasic ST and NBT thin films. The dielectric characteristics of the multilayer thin film were marked by a temperature stable behavior (temperature coefficient of dielectric constant of 780 ppm/°C) in the measured −50°C to 200°C range, frequency‐independent response at room temperature and improved dielectric loss characteristics compared with the NBT ; however, on the expense of decreased permittivity and a reduced ferroelectric stability. Nevertheless, stable dielectric properties were achieved and properties of multilayer may well be exploited in functional devices that demand insensitive operation over wide temperature and frequency ranges.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here