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Control of Electrical Resistivity in Silicon Carbide Ceramics Sintered with Aluminum Nitride and Yttria
Author(s) -
Kim Kwang Joo,
Lim KwangYoung,
Kim YoungWook
Publication year - 2013
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.12498
Subject(s) - materials science , electrical resistivity and conductivity , silicon carbide , ceramic , doping , nitride , sintering , acceptor , yttria stabilized zirconia , dopant , impurity , carbide , wide bandgap semiconductor , mineralogy , metallurgy , analytical chemistry (journal) , composite material , optoelectronics , cubic zirconia , condensed matter physics , chemistry , electrical engineering , physics , organic chemistry , layer (electronics) , chromatography , engineering
The electrical properties of β‐ SiC ceramics were found to be adjustable through appropriate AlN – Y 2 O 3 codoping. Polycrystalline β‐ SiC specimens were obtained by hot pressing silicon carbide ( SiC ) powder mixtures containing AlN and Y 2 O 3 as sintering additives in a nitrogen atmosphere. The electrical resistivity of the SiC specimens, which exhibited n ‐type character, increased with AlN doping and decreased with Y 2 O 3 doping. The increase in resistivity is attributed to Al ‐derived acceptors trapping carriers excited from the N‐derived donors. The results suggest that the electrical resistivity of the β‐ SiC ceramics may be varied in the 10 4 –10 −3 Ω·cm range by manipulating the compensation of the two impurity states. The photoluminescence ( PL ) spectrum of the specimens was found to evolve with the addition of dopants. The presence of N‐donor and Al‐acceptor states within the band gap of 3 C – SiC could be identified by analyzing the PL data.