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Silicon Oxynitride Ceramics Prepared by Plasma Activated Sintering of Nanosized Amorphous Silicon Nitride Powder without Additives
Author(s) -
Fan Lei,
Shi Zhongqi,
Lu Xuefeng,
Wang Chao,
Chen Meng,
Li Yawen,
Wang Hongjie
Publication year - 2013
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.12463
Subject(s) - sintering , materials science , silicon nitride , amorphous solid , ceramic , chemical engineering , silicon oxynitride , nitride , silicon , metallurgy , composite material , crystallography , chemistry , layer (electronics) , engineering
Si 2 N 2 O ceramics were prepared by plasma activated sintering using nanosized amorphous Si 3 N 4 powder without sintering additives within a temperature range of 1400°C–1600°C in vacuum. A mixed Si – N 4− n – O n ( n = 0, 1…4) amorphous structure was formed in the process of sintering, and Si 2 N 2 O crystals were nucleated where the local structure was similar with Si 2 N 2 O . After sintering at 1600°C, the Si 2 N 2 O ceramic was composed of elongated plate‐like Si 2 N 2 O grains and amorphous phase. The Si 2 N 2 O grains showed a width of less than 100 nm and a very high aspect ratio.