High–Energy‐Storage Density Capacitors of   Bi  (  Ni   1/2   Ti   1/2 )  O   3 –  PbTiO   3  Thin Films with Good Temperature Stability | Zendy

Xie Zhenkun | Zendy; Peng Bin | Zendy; Meng Siqin | Zendy; Zhou Yuanyuan | Zendy; Yue Zhenxing | Zendy

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High–Energy‐Storage Density Capacitors of Bi ( Ni 1/2 Ti 1/2 ) O 3 – PbTiO 3 Thin Films with Good Temperature Stability

Author(s) -

Xie Zhenkun,

Peng Bin,

Meng Siqin,

Zhou Yuanyuan,

Yue Zhenxing

Publication year - 2013

Publication title -

journal of the american ceramic society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.9

H-Index - 196

eISSN - 1551-2916

pISSN - 0002-7820

DOI - 10.1111/jace.12443

Subject(s) - materials science , capacitor , annealing (glass) , thin film , capacitance , atmospheric temperature range , analytical chemistry (journal) , power density , energy storage , electrical engineering , nanotechnology , voltage , electrode , chemistry , composite material , power (physics) , physics , chromatography , quantum mechanics , meteorology , engineering

High–energy‐storage density capacitors with thin films of 0.5 Bi ( Ni 1/2 Ti 1/2 ) O 3 –0.5 PbTiO 3 ( BNT – PT ) were fabricated by chemical solution deposition technique on Pt / Ti / SiO 2 / Si substrates. The dense thin films with pure‐phase perovskite structure could be obtained by annealing at 750°C. High capacitance density (~1925 nF/cm 2 at 1 kHz) and extremely high‐energy density (~45.1 J/cm 3 ) under an electric field of 2250 kV/cm were achieved at room temperature. The energy‐storage density and efficiency varied little in a wide temperature range from −190°C to 250°C. The high–energy‐storage density and good temperature stability make BNT – PT films promising candidates for high power electric applications.

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