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Silicon Carbide Whiskers: Preparation and High Dielectric Permittivity
Author(s) -
Kuang Jianlei,
Cao Wenbin
Publication year - 2013
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.12393
Subject(s) - whiskers , materials science , silicon carbide , dielectric , dissipation factor , microwave , monocrystalline whisker , permittivity , composite material , dielectric loss , carbide , carbon fibers , silicon , chemical engineering , metallurgy , optoelectronics , composite number , physics , quantum mechanics , engineering
Silicon Carbide whiskers have been synthesized using silica sol and activated carbon as reagents via microwave heating without the presence of any of the catalysts, such as Fe , Ni , and Al etc.. The synthesized whiskers were separated and concentrated from the as‐synthesized products using the gravity concentration process. The dielectric properties of the concentrated SiC whiskers were investigated in the frequency range 2–18 GHz. The results indicate that the SiC whiskers exhibit higher dielectric permittivity and loss tangent than those of SiC powders, respectively, due to the high density of stacking faults formed in the SiC whiskers prepared by microwave heating.