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Microstructures and Microwave Dielectric Properties of Bi 2 O 3 ‐Deficient Bi 12 SiO 20 Ceramics
Author(s) -
Jeong ByoungJik,
Joung MiRi,
Kweon SangHyo,
Kim JinSeong,
Nahm Sahn,
Choi JiWon,
Hwang SeongJu
Publication year - 2013
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.12323
Subject(s) - materials science , microstructure , ceramic , sintering , dielectric , microwave , relative density , phase (matter) , analytical chemistry (journal) , mineralogy , grain size , composite material , optoelectronics , chemistry , physics , organic chemistry , chromatography , quantum mechanics
The Microstructure and microwave dielectric properties of Bi 2 O 3 ‐deficient Bi 12 SiO 20 ceramics were investigated. A small amount of unreacted Bi 2 O 3 phase melted during sintering at 825°C and assisted with densification and grain growth in all samples. The melted Bi 2 O 3 reacted with remnant SiO 2 during cooling to form a Bi 4 Si 3 O 12 secondary phase. The nominal composition of Bi 11.8 SiO 19.7 ceramics sintered at 825°C for 4 h had a high relative density of 97% of the theoretical density, and good microwave dielectric properties: ε r = 39, Q × f = 74 000 GHz, and τ f = −14.1 ppm/°C. Moreover, this ceramic did not react with Ag at 825°C.
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