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Growth of Highly Conformal TiC x Films Using Atomic Layer Deposition Technique
Author(s) -
Hong Tae Eun,
Choi SangKyung,
Kim SooHyun,
Cheon Taehoon
Publication year - 2013
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.12289
Subject(s) - atomic layer deposition , rutherford backscattering spectrometry , analytical chemistry (journal) , layer (electronics) , deposition (geology) , materials science , titanium , electrical resistivity and conductivity , chemical vapor deposition , thin film , chemistry , metallurgy , nanotechnology , physics , geology , paleontology , chromatography , quantum mechanics , sediment
TiC x films were deposited by atomic layer deposition using tetrakis–neopentyl–titanium [ Ti ( CH 2 C ( CH 3 ) 3 ) 4 ] and H 2 plasma as the precursor and reactant, respectively. The growth of the rock‐salt–structured TiC x films was confirmed by X ‐ray and electron diffraction. The C ‐to‐ Ti ratio determined by Rutherford backscattering spectrometry was ~0.52 and the film resistivity was as low as ~600 μΩ cm with a high density of 4.41 g/cm 3 . The step coverage was approximately 90% over the trench structure (top opening diameter of 25 nm) with an aspect ratio of ~4.5.