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High‐Temperature Dielectric Relaxation in Pb ( Mg 1/3 Nb 2/3 ) O 3 – PbTiO 3 Single Crystals
Author(s) -
Wang Chunchang,
Zhang Meini,
Xia Wei
Publication year - 2013
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.12210
Subject(s) - relaxation (psychology) , dielectric , atmospheric temperature range , analytical chemistry (journal) , materials science , oxygen , phase (matter) , chemistry , thermodynamics , physics , chromatography , optoelectronics , psychology , social psychology , organic chemistry
We reported the dielectric properties of Pb ( Mg 1/3 Nb 2/3 ) O 3 – PbTiO 3 single crystal in the temperature range of 300–1073 K and the frequency range of 100 Hz–10 MHz. Our results showed the coexistence of both true‐ and pseudo‐relaxor behaviors in the crystal. The true relaxor behavior related to the paraelectric‐ferroelectric phase transition occurs at~423 K. The pseudo‐relaxor behavior appearing at~773 K was found to be related to oxygen vacancies. Further investigation reveals that the pseudo‐relaxor behavior has fine structure: it contains two oxygen‐vacancy‐related relaxation processes. The low‐temperature relaxation process is a dipolar relaxation created by the hopping motions of the oxygen vacancies, and the high‐temperature relaxation process is a Maxwell‐Wagner relaxation caused by the sample/electrode contacts.