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Electrical Properties of Amorphous BaTi 4 O 9 Films Grown on Cu / Ti / SiO 2 / Si Substrates Using RF Magnetron Sputtering
Author(s) -
Kim JinSeong,
Kang MinGyu,
Kweon SangHyo,
Han Guifang,
Kang ChongYun,
Yun JungRak,
Jeong YoungHun,
Paik JongHoo,
Nahm Sahn
Publication year - 2013
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.12201
Subject(s) - amorphous solid , materials science , dissipation factor , schottky diode , dielectric , capacitance , sputtering , capacitor , analytical chemistry (journal) , sputter deposition , temperature coefficient , optoelectronics , schottky barrier , thin film , electrode , electrical engineering , voltage , composite material , nanotechnology , diode , chemistry , organic chemistry , engineering , chromatography
Amorphous BaTi 4 O 9 ( BT 4) films for use as capacitors embedded in PCB substrates were grown on Cu electrodes at low temperatures (≤ 200°C). The dielectric constant ( k ) of the amorphous BT 4 film grown at room temperature (RT) was 38, and its dissipation factor was 3.2% at 100 kHz. A similar k value was obtained at radio‐frequency ranges, with a quality factor of 143 at 1.0 GHz. The films showed a capacitance density of 200 nF/cm 2 , a temperature coefficient of capacitance of 296 ppm/°C at 75 kHz, and a breakdown voltage of 42.5 V. This film therefore satisfies the requirements of the International Technology Roadmap for Semiconductors for 2016 for capacitors grown on organic substrates. In addition, the leakage current mechanism of the amorphous BT 4 films was found to be Schottky emission, and the Schottky barrier height was calculated as 2.26 eV.