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Color‐Tunable Up‐Conversion Emission and Infrared Photoluminescence and Dielectric Relaxation of Er 3+ / Yb 3+ Co‐Doped Bi 2 Ti 2 O 7 Pyrochlore Thin Films
Author(s) -
Zhao Jianxiong,
Zhang Qinyuan,
Qin Ni,
Li Baojun,
Bao Dinghua
Publication year - 2013
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.12187
Subject(s) - photoluminescence , materials science , thin film , analytical chemistry (journal) , dielectric , doping , excited state , infrared , pyrochlore , relaxation (psychology) , optoelectronics , optics , phase (matter) , chemistry , nanotechnology , atomic physics , physics , organic chemistry , chromatography , psychology , social psychology
The color‐tunable up‐conversion ( UC ) emission and infrared photoluminescence and dielectric relaxation of Er 3+ / Yb 3+ co‐doped Bi 2 Ti 2 O 7 pyrochlore thin films prepared by a chemical solution deposition method have been investigated. The pyrochlore phase structure of Bi 2 Ti 2 O 7 can be stabilized by Er 3+ / Yb 3+ co‐doping. Intense color‐tunable UC emission and infrared photoluminescence can be detected on the thin films excited by a 980 nm diode laser. Two UC emission bands centered at 548 and 660 nm in the spectra can be assigned to 2 H 11/2 , 4 S 3/2 → 4 I 15/2 and 4 F 9/2 → 4 I 15/2 transitions of Er 3+ ions, respectively. A Stokes infrared emission centered at 1530 nm is due to 4 I 13/2 → 4 I 15/2 transition of Er 3+ ions. The dependence of UC emission intensity on pumping power indicates that the UC emission of the thin films is a two‐photon process. The thin films also exhibit a relatively high dielectric constant and a low dissipation factor as well as a good bias voltage stability. Temperature‐ and frequency‐dependent dielectric relaxation has been confirmed. This study suggests that Er 3+ / Yb 3+ co‐doped Bi 2 Ti 2 O 7 thin films can be applied to new multifunctional photoluminescence dielectric thin‐film devices.