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Oxidation Transitions for SiC Part I. Active‐to‐Passive Transitions
Author(s) -
Jacobson Nathan,
Harder Bryan,
Myers Dwight
Publication year - 2013
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.12108
Subject(s) - suboxide , materials science , stoichiometry , chemical engineering , chemistry , optoelectronics , silicon , engineering
Oxidation of SiC can occur in a passive mode where a protective film is generated or in an active mode where a volatile suboxide is generated and can lead to rapid material consumption. The transition between these two modes of oxidation is a critical issue. Evidence indicates that this transition occurs via a different mechanism for the active‐to‐passive transition as compared with that of the passive‐to‐active transition. In Part I of this article, the former (active‐to‐passive mode) is explored. Three different types of SiC are examined: Si ‐rich SiC , stoichiometric SiC , and C ‐rich SiC . Evidence suggests that the SiO 2 / SiC equilibrium requirements as well as formation of SiO (g) at the SiC surface and subsequent oxidation to SiO 2 (s) are critical issues in the active‐to‐passive transition.

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