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Rapid Microwave Annealing of Amorphous Lead Zirconate Titanate Thin Films Deposited by Sol‐Gel Method on La NiO 3 / SiO 2 / Si Substrates
Author(s) -
Chen Y. N.,
Wang Z. J.
Publication year - 2013
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.12066
Subject(s) - materials science , amorphous solid , thin film , lead zirconate titanate , annealing (glass) , microwave , non blocking i/o , sol gel , crystallization , microstructure , substrate (aquarium) , chemical engineering , ferroelectricity , analytical chemistry (journal) , composite material , nanotechnology , dielectric , optoelectronics , crystallography , chemistry , biochemistry , oceanography , chromatography , geology , catalysis , physics , quantum mechanics , engineering
The heating behavior of La NiO 3 ( LNO ) films on SiO 2 / Si substrate heated by 2.45 GHz microwave irradiation in the microwave magnetic field was first investigated, and then amorphous Pb ( Zr 0.52 Ti 0.48 ) O 3 ( PZT ) thin films were deposited on LNO ‐coated SiO 2 / Si substrates by a sol‐gel method and crystallized in the microwave magnetic field. The crystalline phases and microstructures as well as the electrical properties of the PZT films were investigated as a function of the elevated temperature generated by microwave irradiation. The perovskite PZT films with a highly (100)‐preferred orientation can be obtained by microwave annealing at 700°C for only 180 s of total processing time, and have good electrical properties. The results demonstrated that conductive metal oxide LNO as a bottom electrode layer is an advantage for the crystallization of PZT thin films by microwave irradiation in the microwave magnetic field.