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Role of Alumina Buffer Layer on the Dielectric and Piezoelectric Properties of PZT System Thick Films
Author(s) -
Shin Tae Hee,
Ha JongYoon,
Song Hyun Cheol,
Yoon SeokJin,
Hwang SeongJu,
Nahm Sahn,
Park HyungHo,
Choi JiWon
Publication year - 2013
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.12052
Subject(s) - piezoelectricity , materials science , buffer (optical fiber) , substrate (aquarium) , layer (electronics) , dielectric , pyrochlore , silicon , piezoelectric coefficient , composite material , analytical chemistry (journal) , optoelectronics , chemistry , electrical engineering , phase (matter) , oceanography , organic chemistry , chromatography , geology , engineering
Piezoelectric properties of screen‐printed thick films, 0.01 Pb ( Mg 1/2 W 1/2 ) O 3 –0.41 Pb ( Ni 1/3 Nb 2/3 ) O 3 –0.35 PbTiO 3 –0.23 PbZrO 3 + 0.1 wt% Y 2 O 3 + 1.5 wt% ZnO ( PMW – PNN – PT – PZ + YZ ) on alumina (Al 2 O 3 ) buffer layers deposited on Si substrates, were studied. To improve piezoelectric properties of and integrate the PMW – PNN – PT – PZ + YZ thick films, the Al 2 O 3 buffer layers on silicon (Si) substrates were used. The Al 2 O 3 buffer layer on the Si substrate suppressed the pyrochlore phases of the piezoelectric thick films and prevented interdiffusion of Si and Pb . The PMW – PNN – PT – PZ + YZ thick films with 900 nm thick Al 2 O 3 buffer layer showed piezoelectric properties such as P r = 32 μC/cm 2 , E c = 25 kV/cm, and d 33 = 32 pC/N. These significant piezoelectric properties of our screen‐printed PMW – PNN – PT – PZ + YZ thick films by the Al 2 O 3 buffer layers can be applied to functional thick film in many micro‐electromechanical system ( MEMS ) applications such as micro actuators and sensors.