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Mechanisms of Heat Transfer between non Equilibrium Plasma and a Target Covered by a Semiconductor
Author(s) -
CAUQUOT PASCAL,
CAVADIAS SIMEON,
AMOUROUX JACQUES
Publication year - 1999
Publication title -
annals of the new york academy of sciences
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.712
H-Index - 248
eISSN - 1749-6632
pISSN - 0077-8923
DOI - 10.1111/j.1749-6632.1999.tb08775.x
Subject(s) - semiconductor , plasma , ceramic , x ray photoelectron spectroscopy , oxide , materials science , chemistry , atomic physics , analytical chemistry (journal) , thermodynamics , chemical engineering , optoelectronics , metallurgy , quantum mechanics , physics , chromatography , engineering
Elementary phenomena of heat and mass transfer from a non equilibrium low pressure plasma to an oxide target such as ‐n or ‐p type semiconductors have been measured by using an oxygen plasma. The aim of this work is to establish a correlation between the electronic properties of the semiconductors (electronic gap) and their reactivity (activation energy of the recombination reaction). The energetic transfer of a material is defined by the recombination and accommodation coefficients, respectively γ and β. The γ coefficient is measured in a pulsed oxygen plasma reactor in non equilibrium conditions, using an actinometric method. The test materials are ‐p type semiconductors (CoO, MnO, PbO and Sb 2 O 3 ) and ‐n type semiconductors (SnO x ). An experimental study on more complex ceramic material (SiC) is undertaken on a large temperature range (300 K‐1123 K) in order to point out a change in the recombination mechanism when the surface temperature raises. The chemical structure of the material is followed by XPS analyses and shows an oxidation of SiC to SiO 2 structure.