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Transport in (10,10) Carbon Nanotubes with Defects
Author(s) -
ANANTRAM M. P.,
HAN JIE,
GOVINDAN T. R.
Publication year - 1998
Publication title -
annals of the new york academy of sciences
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.712
H-Index - 248
eISSN - 1749-6632
pISSN - 0077-8923
DOI - 10.1111/j.1749-6632.1998.tb09870.x
Subject(s) - conductance , carbon nanotube , transmission coefficient , materials science , condensed matter physics , work (physics) , thermal conduction , band gap , biasing , conductivity , transmission (telecommunications) , nanotechnology , physics , thermodynamics , voltage , composite material , quantum mechanics , engineering , electrical engineering
In this paper, we numerically calculate the conductance characteristics of a uniform (10,10) carbon nanotube in the presence of an applied bias. It is shown that for long tubes, the conduction mechanism involves only the four nondegenerate sub‐bands when the applied bias drops slowly across the tube. The focus of our work is to calculate the transmission coefficient and low bias conductance of carbon nanotubes with defects. Our calculations show that (1) a weak uniform disorder in the tube does not cause a significant change in the zero bias conductance and (2) substitutional defects which are strong scatterers, can cause a gap in the transmission coefficient versus energy at the middle of the band resulting in a significant change in the low bias conductance