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LOCAL MOMENTS NEAR THE METAL‐INSULATOR TRANSITION
Author(s) -
Sachdev Subir
Publication year - 1990
Publication title -
annals of the new york academy of sciences
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.712
H-Index - 248
eISSN - 1749-6632
pISSN - 0077-8923
DOI - 10.1111/j.1749-6632.1990.tb22719.x
Subject(s) - condensed matter physics , quasiparticle , hubbard model , metal–insulator transition , physics , electron , semiconductor , insulator (electricity) , statistical physics , quantum mechanics , superconductivity , electrical resistivity and conductivity , optoelectronics
This paper reviews recent progress in understanding the metal‐insulator transition in a system of spin‐1/2 interacting electrons in the presence of a non‐magnetic random potential. Using results of recent experiments in doped semiconductors, it is argued that the metallic state near the transition can be described by a phenomenological two‐fluid model of local moments and itinerant quasiparticles. A mean‐field calculation on a disordered Hubbard model which justifies this two fluid model is described. Recent advances in the non‐linear sigma model description of the transition are also discussed.