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Densification, Crystallization, and Dielectric Properties of AlN , BN , and Si 3 N 4 Filler‐Containing LTCC Materials
Author(s) -
Hong Kyung Pyo,
Choi Ik Jin,
Jung Jae Woong,
Choi Hong Rak,
Cho Yong Soo,
Kwak Jiyeon,
Kang Dong Heon
Publication year - 2012
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/j.1744-7402.2012.02825.x
Subject(s) - crystallization , materials science , nitride , silicon nitride , boron nitride , phase (matter) , chemical engineering , dielectric , anorthite , composite number , mineralogy , composite material , silicon , metallurgy , chemistry , optoelectronics , organic chemistry , layer (electronics) , engineering
Glass composite dielectrics consisting of calcium aluminoborosilicate glass and nitride fillers such as aluminum nitride, boron nitride, and silicon nitride ( AlN , BN , and Si 3 N 4 ) were investigated. Densification and crystallization behavior depended on the type of filler, filler content, and firing temperature. AlN was most promising in generating desirable densification and dielectric properties ( k of ~7.2 and tanδ of ~0.003) at 850°C with progressive crystallization of common anorthite phase. BN tended to show no significant densification and suppression of crystallization. Si 3 N 4 resulted in abnormal behavior of densification, which can be highlighted with certain expansion at higher temperatures, as well as unexpected crystallization of CaSiO 3 and CaAl 2 SiO 6 .
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