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Magnetron Sputtered Ni ‐rich Nickel Oxide Nano‐Films for Resistive Switching Memory Applications
Author(s) -
Liu Zhen,
Chen Tu pei,
Liu Yang,
Zhang Sam
Publication year - 2012
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/j.1744-7402.2012.02798.x
Subject(s) - materials science , optoelectronics , resistive random access memory , sputter deposition , oxide , sputtering , electrode , resistive touchscreen , cavity magnetron , voltage , metal insulator metal , metal , electrical conductor , nickel oxide , nano , protein filament , thin film , nanotechnology , capacitor , composite material , electrical engineering , metallurgy , chemistry , engineering
Radio‐frequency magnetron sputtering has been used to deposit Ni ‐rich nickel oxide nano‐films to form a metal‐insulator‐metal structure, which exhibits resistive switching behavior. Memory characteristics of the structure have been investigated. The ratio of the current of the structure at the reading voltage of 0.05 V between a low‐resistance state ( LRS ) and a high‐resistance state ( HRS ) was observed to be >10 3 , showing a large memory window at a very low reading voltage. The memory window was well maintained within the time limit of the experiment (5 × 10 4 s), exhibiting good memory retention. The current transport at both the LRS and HRS has been studied, and the result suggests that the formation and annihilation of a conductive filament are responsible for the resistive switching.
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