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Phase Evolution of Ti 3 SiC 2 Annealing in Vacuum at Elevated Temperatures
Author(s) -
Zeng Junling,
Ren Shufang,
Lu Jinjun
Publication year - 2012
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/j.1744-7402.2012.02760.x
Subject(s) - volatilisation , materials science , annealing (glass) , thermal decomposition , decomposition , analytical chemistry (journal) , kinetics , phase (matter) , porosity , diffusion , mineralogy , metallurgy , thermodynamics , composite material , chemistry , quantum mechanics , physics , organic chemistry , chromatography
The thermal decomposition of T i 3 S i C 2 in vacuum furnace up to 1500°C has been investigated. The results show that the mild decomposition of T i 3 S i C 2 commences at 1300°C and the higher the holding temperature, the larger the volatilization of Si atoms. The T i 3 S i C 2 decomposition occurs simultaneously on the surface and in the bulk. Four phases coexist at 1400°C and 1450°C and the Ti 5 Si 3 C x phase appears in the bulk and/or surface. Diffusion distance, rate, and volatilization of Si contribute to the porous structure and the presence of Ti 5 Si 3 C x . The evolution of furnace pressure reflects the decomposition kinetics of T i 3 S i C 2 .
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