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Separating Test Artifacts from Material Behavior in the Oxidation Studies of HfB 2 –SiC at 2000°C and Above
Author(s) -
Carney Carmen M.,
Parthasarathy Triplicane A.,
Cinibulk Michael K.
Publication year - 2012
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/j.1744-7402.2011.02730.x
Subject(s) - materials science , impurity , layer (electronics) , sintering , cubic zirconia , oxide , chemical engineering , porosity , electrical resistance and conductance , composite material , metallurgy , ceramic , organic chemistry , chemistry , engineering
Oxidation characteristics of HfB 2 ‐15 vol% SiC prepared by field‐assisted sintering was examined at 2000°C by heating it in a zirconia‐resistance furnace and by direct electrical resistance heating of the sample. Limitations of the material and the direct electrical resistance heating apparatus were explored by heating samples multiple times and to temperatures in excess of 2300°C. Oxide scales that developed at 2000°C from both methods were similar in that they consisted of a SiO 2 / HfO 2 outer layer, a porous HfO 2 layer, and a HfB 2 layer depleted of SiC . But they differed in scale thicknesses, impurities present, scale morphology/complexity. Possible test artifacts are discussed.