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The Solubility and Temperature Dependence of Resistivity for Aluminum‐Doped Zinc Oxide Ceramic
Author(s) -
Zhang Yulong,
Wang Weiyan,
Tan Ruiqin,
Yang Ye,
Zhang Xianpeng,
Cui Ping,
Song Weijie
Publication year - 2011
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/j.1744-7402.2011.02666.x
Subject(s) - materials science , electrical resistivity and conductivity , doping , solubility , ceramic , zinc , solid solubility , aluminium , atmospheric temperature range , activation energy , analytical chemistry (journal) , aluminum oxide , content (measure theory) , oxide , metallurgy , mineralogy , solid solution , chemistry , thermodynamics , chromatography , physics , optoelectronics , electrical engineering , engineering , mathematical analysis , mathematics
The solubility of Aluminum (Al)‐doped ZnO ceramic was determined to be 0.9 atomic ratio percent (at.%), and the ZnAl 2 O 4 was formed once the Al content achieved 1.0 at.% or above. The resistivity decreased at an Al content of 0–0.8 at.% to a minimum of 1.45 × 10 −3 Ω, while increased at a range of 1.0–6.0 at.%. The resistivity increased and decreased with temperature when the Al content was below and above 2.0 at.%, respectively. The activation energy increased from −489.5 to −65.0 eV and from 66.0 to 293.8 eV when the Al doping content was below and above 2.0 at.%.