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Hexagonal Boron Nitride as a New Ultraviolet Luminescent Material and Its Application
Author(s) -
Watanabe Kenji,
Taniguchi Takashi
Publication year - 2011
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/j.1744-7402.2011.02626.x
Subject(s) - materials science , luminescence , exciton , hexagonal boron nitride , ultraviolet , optoelectronics , band gap , ultraviolet light , excited state , photoluminescence , excitation , chemical physics , nanotechnology , condensed matter physics , atomic physics , physics , graphene , quantum mechanics
Hexagonal boron nitride ( h BN), which is conventionally used as one of the best‐known heat‐resistant materials due to its high thermal and chemical stability, has recently been found as a highly luminous material in the far‐ultraviolet (FUV) region. This paper reviews the recent studies of h BN growth, optical properties, and device application development. In the case of highly pure crystals of h BN grown by the solvent growth method, the electronic excitation states near the band gap are governed by optically allowed exciton effects, which originate from the Jahn–Teller effect on the exciton series. The excitonic luminescence bands are utilized for an FUV plane light‐emitting device excited by field emitters to take advantage of the highly luminous character.