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Electrical Properties of Epitaxial 0.65Pb (Mg 1/3 Nb 2/3 )O 3 ‐0.35PbTiO 3 Thin Films Grown on Buffered Si Substrates by Pulsed Laser Deposition
Author(s) -
Jiang Juan,
Hur SungGi,
Yoon SoonGil
Publication year - 2011
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/j.1744-7402.2010.02605.x
Subject(s) - materials science , pulsed laser deposition , thin film , epitaxy , dielectric , electrical resistivity and conductivity , substrate (aquarium) , analytical chemistry (journal) , coercivity , perovskite (structure) , optoelectronics , nanotechnology , crystallography , condensed matter physics , layer (electronics) , electrical engineering , physics , oceanography , chemistry , engineering , chromatography , geology
Thin films of 0.65Pb (Mg 1/3 Nb 2/3 )O 3 ‐0.35PbTiO 3 (PMN‐PT) of thickness 300 nm were grown on Si (001) substrates using conventional pulsed laser deposition (PLD) at substrate temperature in the range of 500°–650°C in oxygen ambient of 300 mTorr. The La 0.5 Sr 0.5 CoO 3−δ (LSCO) thin films (used as bottom electrode) of RMS roughness of approximately 1.7 nm and resistivity of 2100 μΩ‐cm were epitaxially grown on CeO 2 /YSZ‐buffered Si (001) substrates. The high‐resolution X‐ray diffraction and transmission electron microscopy results show that the PMN‐PT films grown on LSCO/CeO 2 /YSZ/Si substrates at 550°C exhibit the epitaxial perovskite structure. The PMN‐PT films exhibited a high dielectric constant of about 1631 and a low dissipation factor of 0.06 at a frequency of 10 kHz. A good P − E (polarization−electric field) hysteresis characteristic with remanent polarization of 6.34 μC/cm 2 and a coercive field of 33.5 kV/cm was obtained on the PMN‐PT films.