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Bonding Layer Microstructures and Mechanical Behavior of Sapphire/Sapphire Joints Diffusion‐bonded using MgO–Al 2 O 3 –SiO 2 Interlayer
Author(s) -
Zhang Lunyong,
Xing Dawei,
Sun Jianfei,
Zuo Hongbo,
Wang Tiancheng,
Han Jiecai
Publication year - 2011
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/j.1744-7402.2010.02557.x
Subject(s) - materials science , microstructure , sapphire , composite material , diffusion bonding , intergranular fracture , cleavage (geology) , layer (electronics) , fracture (geology) , bonding strength , intergranular corrosion , grain size , optics , laser , physics
The bonding layer microstructures and their effects on fracture behaviors of sapphire joined using MgO (0.5%)–Al 2 O 3 (94%)–SiO 2 (5.5%) interlayer are analyzed. The results indicate that the bonding layer is composed by facetted Al 2 O 3 grains and pores and they are controlled by joining conditions. The fracture mode is mainly intergranular for the pieces with fine grains and changes into cleavage fracture as the grain size increases. Optimal microstructures can be obtained under the condition of 1700°C, holding time of 1.5 h and pressure of 3 Mpa and the flexure strength corresponding plane bonded pieces may be beyond 250 MPa and plane bonded pieces may reach above 300 MPa.