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Anisotropic Dielectric and Electrical Properties of Hot‐Forged SrBi 4 Ti 4 O 15 Ceramics
Author(s) -
Rout Sanjeeb K.,
Barhai Prema K.,
Sinha Ela,
Hussain Ali,
Kim W.
Publication year - 2010
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/j.1744-7402.2009.02453.x
Subject(s) - materials science , curie temperature , anisotropy , dielectric , condensed matter physics , ceramic , dielectric spectroscopy , relaxation (psychology) , thermal conduction , diffraction , composite material , optics , ferromagnetism , psychology , social psychology , physics , optoelectronics , electrode , electrochemistry , chemistry
The effect of grain orientation on the dielectric and electrical properties of SrBi 4 Ti 4 O 15 ceramics are studied by impedance and modulus spectroscopy. The degree of orientation calculated from the X‐ray diffraction pattern is found to be 94.2% along the c ‐axis of the crystal structure. The ratio of permittivity along the perpendicular to parallel direction is found to be ∼2.5 at the Curie temperature. The nonsuperimposition of the normalized Z″ and M″ versus frequency plot revealed that the conduction is localized and deviate from ideal Debye‐like behavior. The conduction mechanism has been explained on the basis of jump relaxation model.