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Cross‐Polarization Confocal Imaging of Subsurface Flaws in Silicon Nitride
Author(s) -
Liu Zunping,
Sun Jiangang,
Pei Zhijian
Publication year - 2011
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/j.1744-7402.2009.02446.x
Subject(s) - materials science , silicon nitride , ceramic , indentation , optics , confocal , microscopy , polarization (electrochemistry) , refractive index , silicon , optoelectronics , composite material , chemistry , physics
A cross‐polarization confocal microscopy (CPCM) method was developed to image subsurface flaws in optically translucent silicon nitride (Si 3 N 4 ) ceramics. Unlike conventional confocal microscopy, which measures reflected light so is applicable only to transparent and semi‐transparent materials, CPCM detects scattered light from subsurface while filtering out the reflected light from ceramic surface. For subsurface imaging, the refractive‐index mismatch between imaging (air) and imaged (ceramic) medium may cause image distortion and reduce resolution in the depth direction. This effect, characterized by an axial scaling factor (ASF), was analyzed and experimentally determined for glass and Si 3 N 4 materials. The experimental CPCM system was used to image Hertzian C‐cracks generated by various indentation loads in the subsurface of a Si 3 N 4 specimen. It was demonstrated that CPCM may provide detailed information of subsurface cracks, such as crack angle and path, and subsurface microstructural variations.