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Orthogonal Design‐Assisted Solvothermal Strategy for Preparing Silicon Nitride Nanodendrites on a Large Scale
Author(s) -
Wang Bainian,
Zhao Peng,
Zhu Yongchun,
Qian Yitai
Publication year - 2010
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/j.1744-7402.2009.02406.x
Subject(s) - autoclave , materials science , silicon nitride , nitride , scale (ratio) , chemical engineering , nanotechnology , process engineering , silicon , optoelectronics , metallurgy , physics , layer (electronics) , quantum mechanics , engineering
We demonstrate herein the orthogonal strategy for preparing Si 3 N 4 dendrites at low temperatures using NaN 3 , SiCl 4 , and Mg powder as the starting materials. The reaction conditions, such as dose of SiCl 4 and Mg, reaction temperature, and reaction time, were investigated in detail. Magnified experiments were carried out in an autoclave with a capacity of 1 L and Si 3 N 4 dendrites were obtained with a conversion ratio of 53.08% calculated from the amount of the limited reactant NaN 3 (because NaN 3 is relatively expensive). Estimated from the magnified experiments, the cost of Si 3 N 4 is much less than the market price, which indicates that this is a promising process for industrial application.