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Microstructure and Mechanical Properties of Lu 2 O 3 ‐Doped Porous Silicon Nitride Ceramics Using Phenolic Resin as Pore‐Forming Agent
Author(s) -
Yin Xiaowei,
Li Xiangming,
Zhang Litong,
Cheng Laifei,
Liu Yongsheng,
Pan Tianhao
Publication year - 2010
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/j.1744-7402.2008.02347.x
Subject(s) - materials science , microstructure , porosity , sintering , ceramic , composite material , flexural strength , silicon nitride , doping , chemical vapor infiltration , layer (electronics) , optoelectronics
The joint process consisting of pressureless sintering and chemical vapor infiltration (CVI) was developed to prepare porous Si 3 N 4 ceramics with controlled microstructure. Lu 2 O 3 and phenolic resin acted as sintering aid and pore‐forming agent, respectively. The 5 wt% Lu 2 O 3 ‐doped ceramics using 12–57 vol% phenolic resin attained a porosity ranging from 46% to 53%. With increasing the resin content, the average pore size increased from 1 to 2 μm. The porous ceramic infiltrated with CVI Si 3 N 4 had an improved microstructure. The decreased pore size and porosity led to an increase in flexural strength, and the densified surface led to an improved surface hardness.