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Effect of Bi 2 O 3 Addition on the Sintering Temperature and Microwave Dielectric Properties of Zn 2 SiO 4 Ceramics
Author(s) -
Kim JinSeong,
Nguyen NgocHuan,
Song MyungEun,
Lim JongBong,
Paik DongSoo,
Nahm Sahn,
Paik JongHoo,
Choi ByungHyun,
Yu SoonJae
Publication year - 2009
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/j.1744-7402.2008.02335.x
Subject(s) - materials science , sintering , microstructure , ceramic , dielectric , analytical chemistry (journal) , microwave , phase (matter) , liquid phase , porosity , mineralogy , composite material , chemistry , physics , optoelectronics , organic chemistry , chromatography , quantum mechanics , thermodynamics
Bi 2 O 3 was added to a nominal composition of Zn 1.8 SiO 3.8 (ZS) ceramics to decrease their sintering temperature. When the Bi 2 O 3 content was <8.0 mol%, a porous microstructure with Bi 4 (SiO 4 ) 3 and SiO 2 second phases was developed in the specimen sintered at 885°C. However, when the Bi 2 O 3 content exceeded 8.0 mol%, a liquid phase, which formed during sintering at temperatures below 900°C, assisted the densification of the ZS ceramics. Good microwave dielectric properties of Q × f =12,600 GHz, ɛ r =7.6, and τ f =−22 ppm/°C were obtained from the specimen with 8.0 mol% Bi 2 O 3 sintered at 885°C for 2 h.