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Transport Properties of the Binary Type I Clathrate K 8 Ge 44 □ 2
Author(s) -
Beekman Matt,
Nolas George S.
Publication year - 2007
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/j.1744-7402.2007.02148.x
Subject(s) - electrical resistivity and conductivity , seebeck coefficient , materials science , thermoelectric effect , thermoelectric materials , clathrate hydrate , thermal conductivity , semiconductor , vacancy defect , doping , binary number , condensed matter physics , thermodynamics , optoelectronics , hydrate , composite material , physics , chemistry , arithmetic , organic chemistry , mathematics , quantum mechanics
We report the synthesis and low‐temperature electrical resistivity, Seebeck coefficient, and thermal conductivity of the binary type I clathrate K 8 Ge 44 □ 2 (□=Ge framework vacancy). Electrical resistivity measurements indicated metallic or heavily doped semiconductor behavior, while the Seebeck was relatively high at −77 μV/K at room temperature. The thermal conductivity was very low, on the order of 1 W/m K at room temperature. This work is part of a continuing effort to investigate new compositions in open‐structured and guest‐framework materials for potential thermoelectric applications.