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Evaluation of Lead Zirconate–Titanate Ceramic Target for Sputter Deposition of Films for Use in Ferroelectric Capacitors
Author(s) -
Cross Jeffrey Scott,
Tsukada Mineharu,
Goto Yasuyuki,
Kamehara Nobuo,
Nagayama Satsuki
Publication year - 2005
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/j.1744-7402.2005.02019.x
Subject(s) - materials science , sputtering , lead zirconate titanate , ceramic , ferroelectricity , wafer , deposition (geology) , capacitor , substrate (aquarium) , sputter deposition , optoelectronics , composite material , analytical chemistry (journal) , thin film , dielectric , nanotechnology , voltage , electrical engineering , chromatography , paleontology , oceanography , chemistry , engineering , sediment , biology , geology
A high‐density 3 in. diameter (Pb,La)(Zr,Ti)O3 [PLZT] ceramic target containing 20% excess PbO was sputtered by radio‐frequency magnetron sputtering to deposit films containing excess Pb and evaluated with respect to target stability for use in the mass production of ferroelectric memories on Si wafers. The results indicated that PLZT film deposition rate increased with power but the excess PbO content correspondingly decreased. The Pb loss in the films was attributed to secondary preferential sputtering of film substrate in the plasma. Regardless of this difference, excess PbO containing 12 in. diameter PLZT ceramic targets were evaluated in a commercial sputtering system over a period of 7 months and the film Pb content was stable within ±1%.