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Structure–Property Relationship in BT‐Based Dielectrics for Ni‐MLCC: Modification of Grain Boundary
Author(s) -
Chazono Hirokazu,
Hagiwara Tomoya
Publication year - 2005
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/j.1744-7402.2005.02002.x
Subject(s) - materials science , grain boundary , ceramic capacitor , dielectric , ceramic , capacitance , capacitor , composite material , doping , electrode , perovskite (structure) , voltage , microstructure , optoelectronics , crystallography , electrical engineering , chemistry , engineering
Structure–property relationship in BaTiO 3 (BT)‐based dielectrics for multi‐layer ceramic capacitors with nickel internal electrode was investigated using samples having various HoO 3/2 concentrations by measuring temperature characteristics of capacitance, voltage–current characteristics, lifetime at highly accelerated life test, high‐resolution analytical electron microscope, and frequency response at elevated temperature and ultra‐low frequency. It was concluded that the addition of Ho affected the shell and grain boundary (GB) characteristics. Incorporation of Ho into BT perovskite lattice and the change in GB characteristics along with the doped concentration of HoO 3/2 were discussed to better understand the role of doped Ho 2 O 3 .