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PREFACE
Author(s) -
Yabin Sun
Publication year - 1946
Publication title -
acta psychiatrica scandinavica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.849
H-Index - 146
eISSN - 1600-0447
pISSN - 0001-690X
DOI - 10.1111/j.1600-0447.1947.tb03910.x
Subject(s) - citation , library science , computer science , psychology , information retrieval
As a successful fruit of semiconductor band gap engineering, silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) has already made considerable progress in wireless communication applications, especially in the past decade. Due to the special device structure and band gap engineering in base region, SiGe HBT technology has been demonstrated with multi-Mrad total dose tolerance and can be used as a strong candidate in space electronics. This book mainly relates to radiation effects and device model of bipolar transistor, and it is intended for a number of different audiences and venues. My purposes are as follows: