Premium
A Low Sintering Temperature Low Loss Microwave Dielectric Material ZnZrNb 2 O 8
Author(s) -
Liao Qingwei,
Li Lingxia,
Ren Xiang,
Yu Xiaoxu,
Guo Dong,
Wang Mingjing
Publication year - 2012
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2012.05450.x
Subject(s) - sintering , dielectric , monoclinic crystal system , materials science , microwave , analytical chemistry (journal) , mineralogy , chemistry , crystallography , composite material , crystal structure , telecommunications , chromatography , optoelectronics , computer science
A low sintering temperature microwave dielectric material ZnZrNb 2 O 8 was reported. It exhibits a monoclinic structure, belongs to the space group P 2/ c ( C 2 h 4 ), and Z = 1. The dielectric constant increased with increasing relative density. The Qf value increased with increasing packing fraction. The τ f increased with increasing dielectric constant. The typical values of ZnZrNb 2 O 8 were ε = 30, Qf = 61 000 GHz, τ f =−52 × 10 −6 °C −1 , sintered at 950°C.