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Enhanced Broadband 2.0 μm Emission and Energy Transfer Mechanism in Ho – Bi Co‐Doped Borophosphate Glass
Author(s) -
Sheng Qiuchun,
Wang Xiaolin,
Chen Danping
Publication year - 2012
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2012.05399.x
Subject(s) - bismuth , doping , energy transfer , excited state , ion , materials science , chemistry , physics , atomic physics , optoelectronics , chemical physics , organic chemistry , metallurgy
A novel borophosphate glass doped with Ho 2 O 3 and Bi 2 O 3 has been investigated. The efficient energy transfer process between Ho 3+ and bismuth ions is observed and the energy transfer efficiency is 47.8%. The enhanced broadband 2.0 μm emission with a full width at half maximum of 180 nm of Ho 3+ : 5 I 7 → 5 I 8 is obtained by codoping Bi 2 O 3 excited by a 445 nm laser diode. The emission properties and energy transfer mechanism of Ho 3+ sensitized by bismuth ions are discussed. The results indicate that this glass is a promising candidate for 2.0 μm laser material.