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High‐Speed Epitaxial Growth of β‐ SiC Film on Si (111) Single Crystal by Laser Chemical Vapor Deposition
Author(s) -
Zhang Song,
Tu Rong,
Goto Takashi
Publication year - 2012
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2012.05354.x
Subject(s) - epitaxy , chemical vapor deposition , materials science , pulsed laser deposition , deposition (geology) , substrate (aquarium) , laser , thin film , combustion chemical vapor deposition , analytical chemistry (journal) , chemical engineering , optoelectronics , nanotechnology , chemistry , carbon film , optics , layer (electronics) , paleontology , oceanography , physics , engineering , chromatography , sediment , geology , biology
(111)‐oriented β‐ SiC film was prepared on Si (111) by laser chemical vapor deposition at a laser power of 100 W, a total pressure of 200 Pa, and a deposition temperature of 1203 K. The β‐ SiC film grew epitaxially on the Si (111) substrate with in‐plane orientation relationship of SiC [1 ¯ 10 ]// Si [1 ¯ 10 ] and SiC [1 ¯ 01 ]// Si [1 ¯ 01 ]. The deposition rate of the β‐ SiC film was 40 μm/h, 10 times higher than that of conventional CVD .