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Synthesis and Electrical Properties of Sputtered ( Na 0.5 Bi 0.5 ) TiO 3 Thin Films on Silicon Substrate
Author(s) -
Quig Sébastien,
Soyer Caroline,
Remiens Denis
Publication year - 2012
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2012.05285.x
Subject(s) - crystallinity , materials science , ferroelectricity , thin film , sputtering , dielectric , crystallite , sputter deposition , analytical chemistry (journal) , hysteresis , piezoelectricity , piezoelectric coefficient , permittivity , mineralogy , nanotechnology , composite material , optoelectronics , chemistry , condensed matter physics , physics , chromatography , metallurgy
The growth and characterizations of polycrystalline ( Na 0.5 Bi 0.5 ) TiO 3 ( NBT ) thin films have been performed. ( Na 0.5 Bi 0.5 ) TiO 3 films have been deposited by rf‐magnetron sputtering on the unheated Pt / TiO x / SiO 2 / Si structure and postannealed to crystallize the film in the perovskite phase. The optimal sputtering conditions and postannealing treatment to obtain a high degree of NBT crystallinity are reported. The dielectric, ferroelectric, and piezoelectric properties of NBT films were investigated. At 10 kHz, the dielectric constant and losses are 520 and 0.032, respectively. The ferroelectric hysteresis loops are well defined with a remnant polarization of 12 μC/cm 2 and a coercive field of 125 kV/cm, but piezoelectric measurements at the macroscopic level were also performed: a high piezo coefficient ( d 33effmax ) of 80 pm/V was obtained, similar to PZT films. This result demonstrates that NBT thin film is really a promising candidate for lead‐free MEMS applications. The local piezoresponse was evaluated by piezoelectric force microscopy.